Copper interconnect structures

ABSTRACT

Semiconductor devices include a patterned dielectric layer overlaying a semiconductor substrate; a metal layer comprising copper disposed in the patterned dielectric layer; and a barrier layer formed at an interface between the dielectric layer and the metal layer, wherein the barrier layer is AlOxNy. The patterned dielectric may define a trench and via interconnect structure or first and second trenches for a capacitor structure. Also disclosed are processes for forming the semiconductor device, which includes subjecting the dielectric surfaces to a nitridization process to form a nitrogen enriched surface. Aluminum metal is then conformally deposited onto the nitrogen enriched surfaces to form AlOxNy at the aluminum metal/dielectric interface. The patterned substrate is then metalized with copper and annealed. Upon annealing, a copper aluminum alloy is formed at the copper metal/aluminum interface.

DOMESTIC PRIORITY

This application is a DIVISIONAL of U.S. application Ser. No.15/186,600, filed Jun. 20, 2016, the contents of which are incorporatedby reference herein in its entirety.

BACKGROUND

The present invention generally relates to semiconductor integratedcircuits, and more particularly, to the structure and formation ofdiffusion barrier structures that create insulation and preventinterdiffusion of copper.

An integrated circuit (IC) generally includes a semiconductor substratein which a number of device regions are formed by diffusion or ionimplantation of suitable dopants. This substrate usually involves apassivating and an insulating layer required to form different deviceregions. The total thickness of these layers is usually less than onemicron. Openings through these layers (called vias or contact holes)allow electrical contact to be made selectively to the underlying deviceregions. A conducting material such as copper is used to fill theseholes, which then make contact to the appropriate region of thesemiconductor device.

The presence of a diffusion barrier, i.e., liner layer, on the sidewallsdefining the openings is desirable because structural delaminationand/or conductor metal diffusion can occur unless there is a layer ofprotection between the conductive layer and the etched insulating layer.For structural integrity, the liner layer should line the entiresidewall and generally cover the bottom surface of any vias as well.

By way of example, the resistance of copper used in interconnectsincreases exponentially as CMOS devices continue to be scaled down. Thiseffect imposes substantial propagation delay on the microelectroniccircuit. In the dielectric/liner/Cu scheme, several factors contributeto the high interconnect resistance for the 10 nm node and below: thehigh resistivity of the Cu liner and the increase of Cu resistivity dueto surface and grain boundary electron scattering. Among these factors,liner resistance accounts for the major portion of interconnectresistance. For example, TaN is a common Cu barrier material and has aresistivity (˜300 μohm-cm) that is about 150 times higher than Curesistivity. For 10 nm node and below, the presence of the liner layerreduces copper volume within the openings by approximately 30-50%.Therefore, further reducing liner resistivity is extremely important toreducing interconnect resistance, meeting interconnect resistancerequirements, and improving device performance.

SUMMARY

The present invention is generally directed to a semiconductor deviceand methods for forming a semiconductor device. In one or moreembodiments, the semiconductor device includes a patterned dielectriclayer overlaying a semiconductor substrate; a metal layer comprisingcopper deposited in the patterned dielectric layer; and a barrier layerat an interface between the dielectric layer and the metal layer,wherein the barrier layer is AlOxNy.

A method for forming a semiconductor device includes providing apatterned substrate including a trench structure and a via structure ina dielectric layer; exposing the surfaces of the trench and viastructures with nitrogen ions to form a nitrogen enriched surface onand/or in a portion of the dielectric layer defining the trench and viastructures; conformally depositing an aluminum metal layer onto theexposed surfaces of the trench and via structures in the presence ofoxygen species in the dielectric to form an AlOxNy liner layer with thenitrogen enriched surface; depositing a copper metal into the trench andvia structures; and annealing to form a copper aluminum alloy at aninterface of the copper metal and the aluminum metal layer.

In one or more embodiments, a method for forming a semiconductor deviceincludes providing a patterned substrate comprising a first trench and asecond trench in a dielectric layer, wherein the first and secondtrenches are spaced apart at a distance from 10 Angstroms to 200Angstroms; conformally depositing an aluminum metal layer onto theexposed surfaces defining the first and second trenches; forming Al₂O₃with oxygen species present in the dielectric layer at an interfacebetween the dielectric layer and the aluminum metal layer; depositing acopper metal into the first and second trenches; and annealing to form acopper aluminum alloy at an interface of the copper metal and thealuminum metal layer.

Additional features and advantages are realized through the techniquesof the present invention. Other embodiments and aspects of the inventionare described in detail herein and are considered a part of the claimedinvention. For a better understanding of the invention with advantagesand features, refer to the description and to the drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter that is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The foregoing and other objects, features, andadvantages of the invention are apparent from the following detaileddescription taken in conjunction with the accompanying drawings inwhich:

FIG. 1 illustrates a cross-sectional view of an exemplary semiconductordevice including an interconnect structure including adielectric/AlOxNy/Al/Cu liner structure;

FIG. 2 illustrates a cross-sectional view of the exemplary semiconductordevice of FIG. 1 after annealing;

FIG. 3 depicts a cross-sectional view illustrating trench and viapatterning formed in an interlevel dielectric layer according to anembodiment of the present invention;

FIG. 4 depicts a schematic cross-sectional view illustrating a two-stepcleaning process to enhance liner adhesion to the dielectric layer andsurface clean, wherein a nitrogen-enriched layer is formed;

FIG. 5 depicts a schematic cross sectional view illustrating thestructure of FIG. 4 after deposition of aluminum, wherein AlOxNy isformed at an interface between the aluminum layer and the dielectriclayer;

FIG. 6 depicts a schematic cross-sectional view illustrating thestructure of FIG. 5 after deposition of a copper metal within the linedtrench and via structure;

FIG. 7 depicts a schematic cross-sectional view illustrating thestructure of FIG. 6 subsequent to an annealing step;

FIG. 8 illustrates a cross sectional view of a semiconductor deviceincluding first and second trenches formed via an etch process;

FIG. 9 illustrates a cross sectional view of a semiconductor device ofFIG. 8 subsequent to conformal deposition of aluminum and formation ofAlOxNy at an interface between the aluminum and a dielectric layer; and

FIG. 10 illustrates copper metallization including seed layer depositionfollowed by copper electroplating.

The detailed description explains the preferred embodiments of theinvention, together with advantages and features, by way of example withreference to the drawings.

DETAILED DESCRIPTION

The present invention generally relates to a copper interconnectstructure and process for forming the copper interconnect structures.The structures and processes generally include formation of an aluminumoxynitride (AlOxNy) liner layer prior to deposition of the copper metalto reduce line and via resistances. In one or more embodiments, aluminummetal and the aluminum oxynitride liner layer is used to replace theprior art TaN/Co liner layer in the interconnect structure to reduceline and via resistances, wherein TaN/Co is known to exhibit aresistivity of about 300 micro-ohms-cm. The AlOxNy layer is selectivelyformed at an interface between the aluminum and dielectric layers tofunction as a copper diffusion barrier layer. In some embodiments, thealuminum metal is then deposited onto the AlOxNy liner layer and canalso be deposited on the bottom of the via, i.e., in direct contact withan underlying copper metal interconnect, thereby advantageously reducingvia resistance. Advantageously, the presence of the aluminum at theinterface with copper results in formation of a CuAl alloy uponannealing. CuAl alloys are reported to have a resistance ranging from 8to 14 micro-ohms-cm, which is much lower than the resistivity of theprior art TaN. Additionally, CuAl alloys are well known for havinghigher electromigration resistance then pure copper or pure aluminum.

FIG. 1 illustrates a cross-sectional view of an exemplary semiconductordevice 10 including an interconnect structure that includes adielectric/AlOxNy/Al/Cu liner structure in accordance with the presentdisclosure. The semiconductor device 10 generally includes a firstdielectric layer 12, a first copper metal layer 14, a capping layer 16disposed thereon, a second dielectric layer 18, and via and trenchfeatures 20, 22, respectively, formed in the second dielectric layer 18.The exposed second dielectric surfaces 18 defining the via and trenchfeatures have been exposed to a pre-treatment nitriding process toprovide nitrogen ions on and in the exposed surfaces. A pure aluminum(Al) layer 26 is the deposited onto second dielectric surfaces 18 of thevia and trench features 20, 22, wherein the combination of the Al andthe nitrogen exposed dielectric surface in the presence of oxygenspecies in the dielectric results in the subsequent formation of anAlOxNy liner layer 24. The aluminum can also be formed on the bottom ofthe via 20 in direct contact with the first copper metal layer 14 asshown, i.e., the AlOxNy liner is not formed directly on the first coppermetal layer 24. The structure 10 further includes copper metallizationof the so-formed trench and via so as to provide a copper metalinterconnect 30.

The pure Al layer is deposited onto the nitrogen exposed seconddielectric surfaces 18 of the via and trench features 20, 22 by adeposition process such as, for example, atomic layer deposition (ALD),chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), sputtering, chemical solution deposition, orplating. The thickness of Al layer ranges from 0.5 Angstroms to 250Angstroms. The resulting AlOxNy liner layer 24 formed at the interfacebetween the dielectric layer 18 and the aluminum 26 serves as a barrierto prevent the subsequently deposited copper conductive interconnectmaterial from diffusing through to the dielectric layer 18 and is formednaturally by reaction between Al and the dielectric at room or elevatedtemperature. The thickness of the resulting AlOxNy liner layer may varydepending on the exact means of the deposition process as well as theextent of nitridization employed. In some embodiments, the thickness ofthe AlOxNy liner layer 24 is less than 50 Angstroms, in otherembodiments, the thickness of the AlOXNy liner layer 24 is less than 25Angstroms, and in still other embodiments, the thickness of the AlOXNyliner layer 24 is less than 10 Angstroms.

FIG. 2 illustrates a cross-sectional view of the exemplary semiconductordevice 10 after annealing. As shown, interdiffusion between the copperand the aluminum layer results in the formation of a CuAl alloy 28 isformed at the interface between the aluminum and copper. Annealing isbelieved to cause the copper as well as the aluminum to interdiffuse,which advantageously further reduces resistance and increasesreliability. Depending on the extent of annealing, a gradient may beformed in the AlCu layer 28 with a higher aluminum concentration atabout the interface with the AlOxNy layer 24.

The dielectric layers, 18, e.g., an interlevel dielectric layer, maycomprise any dielectric material including inorganic dielectrics ororganic dielectrics. The dielectric material may be porous ornon-porous. Some examples of suitable dielectrics that can be used asthe dielectric material include, but are not limited to: SiO₂,silsesquioxanes, carbon doped oxides (i.e., organosilicates) thatinclude atoms of Si, C, O and H, thermosetting polyarylene ethers, ormultilayers thereof. The term “polyarylene” is used to denote arylmoieties or inertly substituted aryl moieties which are linked togetherby bonds, fused rings, or inert linking groups such as, for example,oxygen, sulfur, sulfone, sulfoxide, carbonyl and the like. Thedielectric layer may be deposited by PECVD procedures as is generallyknown in the art. These patterned features correspond to the subsequentinterconnect vias (i.e., metal plugs between levels) and can be alignedwith underlying source and/or drain regions or over a metal gatestructure defined by the particular substrate 10.

The capping layer 16 protects the underlying metal conductive line 14from oxidation, humidity, and contamination during processing of thenext metal levels on the semiconductor wafer 10. Additionally, cappinglayer 16 serves to prevent undesirable diffusion of the underlyingconductive line 14 into dielectric layer 18. Capping layer 16 can bemade of any suitable capping material such as silicon nitride, siliconcarbide, silicon oxycarbide, hydrogenated silicon carbide, silicondioxide, organosilicate glass, and other low-k dielectrics.

Referring now to FIGS. 3-7, the process to form the structure depictedin FIGS. 1 and 2 in accordance with one or more embodiments generallybegins with first forming the trench and via features 50, 52,respectively, in a dielectric layer 54, e.g., an interlevel dielectriclayer (ILD), deposited on a capping layer 56 as shown in FIG. 3. Thetrench and via features 50, 52 respectively, are formed throughlithography and etching processes, e.g., a dual damascene process. Thestructure may further include a dielectric layer 58 underlying thecapping layer 56, wherein a copper metal interconnect 60 has previouslybeen formed in the dielectric layer 58. It should be apparent that theunderlying metal layer could be other conductive metals such as, forexample, tungsten, which is commonly utilized in the metal 1 layer. Thepresent invention is not intended to be limited to copper metal in thisor any of the other embodiments disclosed herein. Moreover, it should benoted that one having skill in the art knows that a portion of anintegrated circuit can comprise any number of interconnects anddielectric layers such as to form the desired semiconductor device.

The via features 52 expose a portion of the underlying copper metalinterconnect 60, which is utilized to provide electrical contacttherewith upon subsequent metallization of the trench and via features50, 52, respectively.

The lithographic step generally includes applying a photoresist to thesurface of the dielectric layer, exposing the photoresist to a desiredpattern of radiation, and developing the exposed resist utilizing aphotoresist developer to form a pattern.

The etching process may be a dry etching or wet etching process.

The term “wet etching” generally refers to application of a chemicalsolution. This is preferably a time controlled dip in the etch solution.Preferred etch solutions include HNO₃, HCL, H₂SO₄, HF or combinationsthereof.

The term “dry etching” is used here to denote an etching technique suchas reactive-ion-etching (RIE), ion beam etching, plasma etching or laserablation. During the etching process, the pattern is first transferredto the dielectric layer. The patterned photoresist is typically, but notnecessarily, removed from the structure after the pattern has beentransferred into the dielectric film. The patterned feature formed intothe dielectric material includes the contact holes.

Referring now to FIG. 4, the patterned substrate is then subjected to atwo-step plasma pre-treatment process to enhance liner adhesion to thedielectric, to nitridize the exposed surfaces of the dielectric layer 54defined by the trench and via features 50, 52 for subsequent formationof the AlOxNy liner layer, and to provide surface cleaning of theunderlying exposed portion of the metal layer 60.

The first step includes selective nitridization of the exposeddielectric surfaces 54. In this step, the surfaces of the trench and via50, 52 are exposed to nitrogen ions generated from a nitrogen-containinggas to form a nitrogen enriched dielectric layer 62 on/in the dielectriclayer 54. The generation of the nitrogen ions can be plasma or thermallygenerated, wherein the nitrogen ions penetrate into at least a portionof the dielectric layer surface 54.

As defined herein, the nitrogen-containing gas is selected from thegroup consisting of nitrogen (N₂) and ammonia (NH₃). Upon exposure to asuitable energy source, the nitrogen or ammonia dissociates to formnitrogen ions, which are then utilized to enrich a contact surface suchas the exposed surfaces of the dielectric layer with nitrogen ions.Suitable energy sources include, but are not limited to, plasma energysources and thermal energy sources.

Plasma nitridization generally includes exposing the nitrogen-containinggas to a plasma energy source effective to generate the nitrogen ionsfrom the nitrogen containing gas. The substrate including the exposeddielectric layer surfaces of the trench and via are then exposed to thenitrogen ions to form a nitrogen enriched surface that also penetratesthe respective surface to form a nitrogen enriched gradient in thedielectric layer. The process temperature is between 80 to 400° C., andthe bias is typically between 100 to 900 W.

Thermal nitridization provides a similar effect as plasma nitridizationbut generally includes exposing the substrate to a temperature effectiveto generate nitrogen ions from the nitrogen containing gas. Again, thenitrogen ions contact and penetrate the exposed surface of thedielectric layer so as to form a nitrogen enriched gradient in thedielectric layer. The process temperature is generally between 200 to400° C.

A plasma treatment is then performed to clean the exposed copper metalsurface 60 at the bottom of the via of contaminants, oxides, nitrides,or the like. The process gases preferably include, but are not limitedto, H₂, forming gas, O₂ and combinations thereof and a carrier gas. Thecarrier gases preferably include inert gases, He, Ne, Ar, Kr, Xe and Rn,and combinations thereof. The process conditions preferably include atemperature of between about room temperature and about 450° C., apressure of between about 0.5 mtorr and about 100 torr, an RF power ofbetween about 50 W and about 5 KW, and a process time of between about 5seconds and about 600 seconds.

In FIG. 5, a conformal layer 64 of Al is deposited. The thickness of thelayer is 0.5 to 250 Angstroms (Å). Suitable processes for depositing theconformal layer of Al include, but are not limited to, chemical atomiclayer deposition (ALD), chemical vapor deposition (CVD), plasma enhancedchemical vapor deposition (PECVD), sputtering, chemical solutiondeposition, or plating. By way of example, in the chemical vapordeposition process, metal organic source gases are used to deposit analuminum layer at a temperature of about 215° to 325° C., and adeposition pressure of about 500 millitorr to about 100 ton. Preferably,dimethyl aluminum hydride (DMAH) is used as a deposition precursor.Alternatively, other metal organic precursors, such as triisobutylaluminum (TIBA), trimethyl aluminum (TMA), trimethyl aluminum alane(TMAA), triethyl aluminum, and aluminum monochloride, and the like, canbe used. The processing conditions utilized during the depositionprocess are effective for the nitrogen ions to react with the Al (andoxygen species in the dielectric) so as to form the AlOxNy liner layer66 at the interface between the dielectric layer 54 and the aluminumlayer 64.

The pattern is then filled with a conductive metal 70 such as copper toform the interconnect structure as shown in FIG. 6. Filling the patternwith a copper metal may include first depositing a copper seed layer byan electroplating or an electroless process. The copper seed layer maybe also deposited by sputtering. The seed layer would typically be about50 to 400 Å thick. A thick copper film 70 may then be electroplated ormay be deposited by electroless methods onto the seed layer. After thecopper metal has been deposited, chemical mechanical polishing (CMP) canbe used to remove any excess copper and to provide a planar surface. CMPis a synergistic process that removes material through the physicalgrinding of a slurry containing abrasive particles such as silica, aswell as through chemical action as a result of oxidizing agents such ashydrogen peroxide contained in the slurry.

As shown in FIG. 7, the process then includes an annealing step at anelevated temperature and time, which causes the initial copper grains togrow into larger final grains, generates the desired amount of tensilestress, improves the microstructure of the copper interconnects, andimproves the electrical properties of the copper interconnects. Inaddition, annealing results in interdiffusion of the copper and aluminumat about the interface of the trench and via, thereby increasingelectromigration resistance. In an example application, the annealconditions are a temperature of 200° C. for 30 minutes. However, anysuitable annealing process is within the scope of the invention. Forexample the anneal temperature may range from 100-300° C., and the timefor the anneal may range from 10 minutes to 1 hour.

In one or more other embodiments shown in FIGS. 8-10, the process offorming metalized copper layers may be employed for forming capacitorcircuits. The capacitor circuits may be constructed at various levelswithin the semiconductor device. As shown in FIG. 8, an exemplarysemiconductor device 100 is shown. The semiconductor device 100generally includes a first dielectric layer 112, a first copper metallayer 114, a capping layer 116 disposed thereon, a second dielectriclayer 118, and first and second trench features 120, 122, respectively,formed in the second dielectric layer 118. The spacing between the firstand second trench is 10 Angstroms to 200 Angstroms in most embodiments,although a greater or less spacing is also contemplated.

The patterned feature may be subjected to a nitridization process toprovide nitrogen ions, wherein the nitrogen ions penetrate into at leasta portion of the exposed trench surfaces 120, 122 to form a nitrogenenriched dielectric layer 123. The generation of the nitrogen ions canbe plasma or thermally generated as discussed above.

In FIG. 9, a thin conformal layer of aluminum 124 is then deposited byPVD or CVD and Al₂O₃ is naturally formed at the aluminum and dielectricinterface, which because of the spacing merges, which can be used toform a capacitor structure in the trenches. In the presence of thenitrogen ions, the merger results in the formation AlOxNy layer, whichcan be used to separate the trenches 120, 122.

In FIG. 10, the pattern is filled with a conductive metal 130 such ascopper to form the first and second copper electrodes 132, 134,respectively in the trenches 120, 122 as shown in FIG. 11. A seed layermay first be deposited by an electroplating or an electroless process.The seed layer may be also deposited by sputtering. The seed layer wouldtypically be about 500 to 400 Å thick. A thick copper film may then beelectroplated or may be deposited by electroless methods onto the seedlayer. After the copper metal has been deposited, chemical mechanicalpolishing (CMP) can be used to remove any excess copper and to provide aplanar surface. CMP is a synergistic process that removes materialthrough the physical grinding of a slurry containing abrasive particlessuch as silica, as well as through chemical action as a result ofoxidizing agents such as hydrogen peroxide contained in the slurry.

The process then includes an annealing step at an elevated temperatureand time. The anneal process causes the initial copper grains to growinto larger final grains, generates the desired amount of tensilestress, improves the microstructure of the copper interconnects, andimproves the electrical properties of the copper interconnects. In anexample application, the anneal conditions are a temperature of 200° C.for 30 minutes. However, any suitable annealing process is within thescope of the invention. For example the anneal temperature may rangefrom 100-300° C. and the time for the anneal may range from 10 minutesto 1 hr. Moreover, the aluminum at the interface between the metal layerand the aluminum layer forms a copper aluminum alloy.

Advantageously, the increased effectiveness of the merged liner betweenthe trenches provides a means to increase capacitor density.

All ranges disclosed herein are inclusive of the endpoints, and theendpoints are combinable with each other.

All cited patents, patent applications, and other references areincorporated herein by reference in their entirety.

The use of the terms “a” and “an” and “the” and similar referents in thecontext of describing the invention (especially in the context of thefollowing claims) are to be construed to cover both the singular and theplural, unless otherwise indicated herein or clearly contradicted bycontext. Further, it should further be noted that the terms “first,”“second,” and the like herein do not denote any order, quantity, orimportance, but rather are used to distinguish one element from another.

While the preferred embodiment to the invention has been described, itwill be understood that those skilled in the art, both now and in thefuture, may make various improvements and enhancements which fall withinthe scope of the claims which follow. These claims should be construedto maintain the proper protection for the invention first described.

What is claimed is:
 1. A method for forming a semiconductor devicecomprising: providing a patterned substrate comprising a trenchstructure and a via structure in a dielectric layer; exposing thesurfaces of the trench and via structures with nitrogen ions to form anitrogen enriched surface on and/or in a portion of the dielectric layerdefining the trench and via structures; conformally depositing analuminum metal layer onto the exposed surfaces of the trench and viastructures in the presence of oxygen species in the dielectric to forman aluminum oxynitride liner layer with the nitrogen ions within thenitrogen enriched surface; depositing a copper metal into the trench andvia structures; and annealing to form a copper aluminum alloy at aninterface of the copper metal and the aluminum metal layer.
 2. Themethod of claim 1, wherein the nitrogen ions are generated from anitrogen containing gas by exposing the nitrogen containing gas to anenergy source effective to generate the nitrogen ions from the nitrogencontaining gas.
 3. The method of claim 1, wherein the energy source is aplasma energy source.
 4. The method of claim 1, wherein the energysource is a thermal energy source.
 5. The method of claim 1, wherein thedielectric layer is an interlevel dielectric layer.
 6. A method forforming a semiconductor device comprising: providing a patternedsubstrate comprising a first trench and a second trench in a dielectriclayer, wherein the first and second trenches are spaced apart at adistance from 10 Angstroms to 200 Angstroms; conformally depositing analuminum metal layer onto the exposed surfaces defining the first andsecond trenches; forming Al₂O₃ with oxygen species present in thedielectric layer at an interface between the dielectric layer and thealuminum metal layer; depositing a copper metal into the first andsecond trenches; and annealing to form a copper aluminum alloy at aninterface of the copper metal and the aluminum metal layer.
 7. Themethod of claim 6, further comprising exposing the dielectric layerdefining the first and second trenches with nitrogen ions to form anitrogen enriched surface on and/or in a portion of the dielectric layerdefining the first and second trenches prior to depositing the aluminummetal layer, wherein subsequently conformally depositing the aluminummetal layer forms aluminum oxynitride at an interface between thedielectric layer and the aluminum layer.
 8. The method of claim 7,wherein generating the nitrogen ions from the nitrogen containing gascomprises exposing the nitrogen containing gas to an energy sourceeffective to generate the nitrogen ions from the nitrogen containinggas.
 9. The method of claim 6, wherein the copper metal deposited in thefirst and second trenches forms first and second electrodes,respectively.
 10. A method for forming a semiconductor devicecomprising: providing a patterned substrate comprising a trenchstructure and a via structure in a dielectric layer, wherein thedielectric layer is formed on a capping layer overlying a copperconductor, wherein the trench and via structure exposes a surface of themetal conductor; conformally depositing an aluminum metal layer onto theexposed surfaces of the trench and via structures in the presence ofoxygen species in the dielectric to form an aluminum containing linerlayer on and in the exposed dielectric surfaces of the trench and viastructures; depositing a copper metal into the trench and viastructures; and annealing to form a copper aluminum alloy at aninterface of the copper conductor and the aluminum metal layer.
 11. Themethod of claim 10, further comprising exposing the patterned substratewith nitrogen ions to form a nitrogen enriched surface on and/or in aportion of the dielectric layer defining the trench and via structuresprior to conformally depositing the aluminum metal layer.
 12. The methodof claim 11, wherein the aluminum containing liner layer on and in theexposed dielectric surfaces of the trench and via structures is analuminum oxynitride.
 13. The method of claim 11, wherein the aluminummetal layer is at a thickness within a range of 0.5 Angstroms to 250Angstroms.
 14. The method of claim 11, wherein the aluminum containingliner layer on and in the exposed dielectric surfaces of the trench andvia structures is an aluminum oxide.
 15. The method of claim 11, whereinthe nitrogen ions are generated from a nitrogen containing gas byexposing the nitrogen containing gas to an energy source effective togenerate the nitrogen ions from the nitrogen containing gas.
 16. Themethod of claim 15, wherein the energy source is a plasma energy source.17. The method of claim 15, wherein the energy source is a thermalenergy source.
 18. The method of claim 10, wherein the annealing is at atemperature within a range of 100° C. to 300° C. for a period rangingfrom 10 minutes to 60 minutes.
 19. The method of claim 10, wherein thedielectric layer is an interlevel dielectric layer.
 20. The method ofclaim 10, wherein the capping layer comprises silicon nitride, siliconcarbide, silicon oxycarbide, hydrogenated silicon carbide, silicondioxide, or organosilicate glass.